Sb- and Al-free ultra-high-current tunnel FET designs

We propose a series of ultra-high-current triple-heterojunction (3HJ) tunnel field-effect transistor (TFET) designs based on InGaAs/InP materials. Such materials are Sb- and Al-free for ease of processing and to permit low-trap-density dielectric interfaces. Quantum transport simulations, based on eight-band kp Hamiltonian, considering effects of strain and electron-phonon scattering, are performed to guide the design and predict the device performance. With V
_DD
=0.3V and I
_OFF
=1nA/μm, the best design can achieve ballistic I
_ON
of 605μA/μm and, with electron-phonon scattering modeled at 310eV/nm optical deformation constant, a still-high 392μA/μm.